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Transistor à effet de champ
(31)
le transistor de la Manche de 60V TO-263 N, TO-220 a avancé le transistor à effet de champ de puissance
Prix: Negotiated
MOQ: Negotiable
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
60V TO-263 n channel transistor TO-220 advanced power field effect transistor Mosfet n channel features: FET Type:N-Channel Enhancement mode Very low on-resistance Flexible and very practical High switching capability 100% Avalanche Tested before sending to customers Pb-free lead plating; RoHS compl... Voir plus
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Approbation horizontale du transistor SOT323 3D 3H 3M RoHS de puissance élevée de sortie de transistor MOSFET de P
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor TYPE NUMBERMARKING CODE: BC856W: 3D* BC856AW: 3A* BC856BW: 3B* BC857W: 3H* BC857AW: 3E* BC857BW: 3F* BC857CW: 3G* BC858W: 3M* Field effect transistor features: Low current(max.100mA) Low voltage(max.65V) base-emitter volta... Voir plus
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1MHz SOP8 LM358 LM358DR SMD dans tout l'amplificateur de trou
Prix: Negotiated
MOQ: 3000pcs
Heure de livraison: 10-15 days
Marque: CANYI
Souligner:LM358DR SMD Throught Hole Amplifier, SOP8 SMD Throught Hole Amplifier, 1MHz Power Field Effect Transistor
LM358DR SMD Amplifier dual operational amplifiers SOP8 LM358 LM358DR SMD Amplifier dual operational amplifiers SOP8 LM358 Features Available in 8-Bump micro SMD chip sized package,(See AN-1112) Internally frequency compensated for unity gain Large dc voltage gain: 100 dB Wide bandwidth (unity gain):... Voir plus
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Transistor de puissance de transistor MOSFET de TO-92 600mA 625mW NPN MPS2222A MPS2222 2222A
Prix: Negotiated
MOQ: 3000pcs
Heure de livraison: 10-15 days
Marque: CANYI
Souligner:625mW NPN Mosfet Power Transistor, 600mA NPN Mosfet Power Transistor, MPS2222A Transistor
MPS2222A MPS2222 2222A TO-92 NPN mosfet power transistor Choose Canyi to get more benefit: Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi Competitive price and save your time Over 10 years work experience technical service team Mix order accepted and free sample Our fast delivery t... Voir plus
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Régulateurs de tension positifs de L7805CV TO-220 L7805 7805 1.5A 5V
Prix: Negotiated
MOQ: Negotiable
Heure de livraison: 10-15 days
Marque: CANYI
Souligner:L7805CV Positive Voltage Regulators, 1.5A 5V Positive Voltage Regulators, TO-220 Through Hole Voltage Regulator
L7805CV voltage regulator TO-220 L7805 7805 5V POSITIVE VOLTAGE REGULATORS Features Output current to 1.5 A Output voltage of 5V Thermal overload protection Short circuit protection Output transition SOA protection Description The L7805CV of three-terminal positive regulators is available in TO-220 ... Voir plus
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Régulateur de tension positif de L7812CV L7812 KA7812 MC7812 12V 1A/1.5A
Prix: Negotiated
MOQ: Negotiable
Heure de livraison: 10-15 days
Marque: CANYI
Souligner:MC7812 Positive Voltage Regulator, KA7812 Positive Voltage Regulator, L7812CV Through Hole Voltage Regulator
L7812CV L7812 KA7812 MC7812 Voltage Regulator 12V 1A/1.5A TO-220 Feature summary Output current to 1.5A Output voltages of 5; 5.2; 6; 8; 8.5; 9; 10; 12; 15; 18; 24V Thermal overload protection Short circuit protection Output transition SOA protection Description The L7800 series of three-terminal po... Voir plus
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Convertisseurs de C.C à C.A. de VIPER22A VIPER22 AP8022 DIP-8 60KHZ
Prix: Negotiated
MOQ: Negotiable
Heure de livraison: 10-15 days
Marque: CANYI
Souligner:60KHZ AC DC Converters, VIPER22A AC DC Converters, VIPER22 Through Hole Transistor
VIPER22A VIPER22 AP8022 DIP-8 In Stock FEATURE Fixed 60KHZ switching frequency 9V to 38V wide range VDD voltage current mode control auxilary undervoltage lockout with hysteresis high voltage start up current source overtemperature, overcurrent and overvoltage protection with aytorestart. DESCRIPTIO... Voir plus
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Paquet du transistor MOSFET NCE30H10K TO-252 de puissance de mode d'amélioration de la Manche de DNO N
Prix: usd 0.2/pcs
MOQ: 2500PCS
Heure de livraison: 3-5 days
Marque: NCE
Souligner:NCE N Channel MOSFET, NCE30H10K Surface Mount MOSFET, TO-252 Surface Mount MOSFET
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor N channel transistor featuresVDS =30V,ID =100ARDS(ON) Voir plus
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transistor MOSFET ITO220 du transistor 3N80 de la Manche du transistor à effet de champ 800V/N
Prix: Negotiated
MOQ: Negotiable
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
800V n channel transistor 3N80 mosfet ITO220 field effect transistor 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avala... Voir plus
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Transistor à effet de champ de la haute précision 3N80 3A 800V/transistor MOSFET N de puissance - creusez des rigoles TO-220
Prix: Negotiated
MOQ: Negotiable
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:high power transistor, p channel transistor
High precision 3N80 3A 800V Field Effect Transistor/ Power Mosfet N-Channel TO-220 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching ca... Voir plus
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Transistor MOSFET de puissance de mode d'amélioration de triode de la Manche du transistor à effet de champ MX2301 P
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 1 - 2 Weeks
Marque: DEC
Souligner:mosfet power transistor, high power transistor
Electronic Components A1SHB Transistor 2301 -20V -2.8A SOT-23 P-Channel Product Description The MX2301A uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ... Voir plus
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Bâti de surface de tube de MOS du transistor à effet de champ de composants électroniques MX3401 -30V VDS
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 1 - 2 Weeks
Marque: DEC
Souligner:high power transistor, p channel transistor
electronic components MX3401 transistor -30V -4.2A SOT-23-3L P-channel Description The MX3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Shenzh... Voir plus
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Double N - conception à haute densité de cellules du transistor à effet de champ de la Manche MXN3312 pour la commutation de puissance
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 1 - 2 Weeks
Marque: DEC
Souligner:mosfet power transistor, p channel transistor
MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. High density cell design fo ultra low Rdson F... Voir plus
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Transistor extérieur P de puissance élevée du bâti MX3407 - le type RoHS de la Manche a délivré un certificat
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 1 - 2 Weeks
Marque: DEC
Souligner:mosfet power transistor, high power transistor
Electronic Components MX3407 Field Effect Transistor P Channel In Stock Product Description High power and current handing capability Lead free product is acquired Surface mount package Our Advantage: 1. Electronic component specialist and professional. 2. Strong R & D team, experienced research... Voir plus
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Paquet d'original du transistor MOSFET 2A 600V TO-220F de transistor de la Manche de FQPF2N60C FQPF2N60 2N60 N
Prix: US$ 0.1-0.19 per unit (Pieces)
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: Canyi
Souligner:mosfet power transistor, high power transistor
FQPF2N60C FQPF2N60 2N60 MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package Features:1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 VLow gate charge ( typical 9.0 nC)Low Crss ( typical 5.0 pF)Fast switching100% avalanche testedImproved dv/dt capabilitGeneral Descriptio... Voir plus
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Mode d'amélioration de la Manche du transistor 2.5A 20V A1SHB P de puissance élevée de MOS des FETs SOT-23 des transistors MOSFET SI2301
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features:Advanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMaximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)ParameterSymbolLimitUnitDr... Voir plus
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Transistor de canal du transistor MOSFET A09T n du transistor de puissance de transistor MOSFET d'AO3400 SOT-23 NPN
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V Current - Continuous Drain (Id) 25°C5.8A (Ta) Driv... Voir plus
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N acheminent les transistors à effet de champ de transistor MOSFET 10N60 600V pour les alimentations d'énergie commutées de mode
Prix: US$ 0.1-0.19 per unit (Pieces)
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: Canyi
Souligner:mosfet power transistor, high power transistor
10N60 600V n channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche te... Voir plus
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Composant électronique AP70N03NF du transistor MOSFET SMD de transistor de la Manche du circuit intégré N
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
AP70N03NF.pdfAP70N03NF Transistor MOSFET SMD N-Channel Electronic Component for Integrated Circuit Description The AP70N03NF uses advanced trench technology to provide excellent RDS(ON), low gate 6][charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery ... Voir plus
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La Manche du transistor MOSFET SMD N de transistor à effet de champ de puissance d'AP85N03NF avec le commutateur de charge
Prix: Negotiated
MOQ: 1000PCS
Heure de livraison: 3-5 days
Marque: CANYI
Souligner:mosfet power transistor, high power transistor
AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch Description The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other S... Voir plus
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