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Transistor de puissance de transistor MOSFET
(18)
Multi Functional Mosfet Power Transistor Halogen - Free Devices Available
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
Mosfet Power Transistor Description The Power MOSFET is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the po... Voir plus
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Conducteur à haute tension original Using Transistor de transistor MOSFET de transistor de puissance de transistor MOSFET
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: OTOMO
Souligner:Transistor de puissance original de transistor MOSFET, Transistor de puissance à haute tension de transistor MOSFET, Conducteur Using Transistor de transistor MOSFET de GV
Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the ... Voir plus
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8H02ETS conjuguent charge de porte du transistor de puissance de transistor MOSFET de la Manche de N basse 20V
Prix: Negotiated
MOQ: 1000-2000 PCS
Heure de livraison: 1 - 2 Weeks
Marque: OTOMO
Souligner:Double transistor de puissance de transistor MOSFET de la Manche de N, Transistor de puissance de transistor MOSFET 20V, Charge de porte de transistor de puissance de transistor MOSFET basse
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) &l... Voir plus
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- ... Voir plus
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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Fiel... Voir plus
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P ... Voir plus
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High Performance Mosfet Power Transistor With Extreme High Cell Density
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
Highest Performance Mosfet Power Transistor With Extreme High Cell Density Mosfet Power Transistor Feature Description It is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteri... Voir plus
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High Performance Mosfet Power Transistor With Extreme High Cell Density
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching behavior is well controlled with a ... Voir plus
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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status ... Voir plus
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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters ... Voir plus
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Durable High Speed Power Switching Transistor , Power Darlington Transistor
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (... Voir plus
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS... Voir plus
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
Prix: Negotiated
MOQ: Negotiation
Heure de livraison: 1 - 2 Weeks
Marque: Hua Xuan Yang
Souligner:n channel mosfet transistor, high voltage transistor
General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID = 6A RDS(ON) < 2... Voir plus
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MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel
Prix: Negotiable
MOQ: 960
Heure de livraison: 5-15days
Marque: OTOMO
MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS Voir plus
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Type à forte intensité haute performance du transistor de puissance de transistor MOSFET double N
Prix: Negotiated
MOQ: 1000-2000 PCS
Heure de livraison: 1 - 2 Weeks
Marque: OTOMO
Souligner:Transistor de puissance à forte intensité de transistor MOSFET, Type du transistor de puissance de transistor MOSFET double N, Performance de transistor de puissance de transistor MOSFET haute
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electric... Voir plus
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courant continu de drain de double N-canal de transistor de puissance de transistor MOSFET de 6.5A 30V
Prix: Negotiated
MOQ: 1000-2000 PCS
Heure de livraison: 1 - 2 Weeks
Marque: OTOMO
Souligner:transistor de puissance du transistor MOSFET 30V, transistor 6.5A à haute tension, Transistor de puissance de transistor MOSFET de bobine
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electr... Voir plus
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Commutateur de transistor MOSFET de logique de HXY9926A, Manche du commutateur électrique de transistor MOSFET la double N ±1.2v VGS
Prix: Negotiated
MOQ: 1000-2000 PCS
Heure de livraison: 1 - 2 Weeks
Marque: OTOMO
Souligner:Commutateur de transistor MOSFET de logique de HXY9926A, commutateur électrique du transistor MOSFET 20v, Commutateur électrique de transistor MOSFET de GV
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-direction... Voir plus
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RoHS conjuguent des TRANSISTORS MOSFET du transistor de puissance de transistor MOSFET de la Manche de N SOT-23-6L 6,0 un VDSS
Prix: Negotiated
MOQ: 1000-2000 PCS
Heure de livraison: 1 - 2 Weeks
Marque: OTOMO
Souligner:Transistor de puissance de transistor MOSFET de RoHS, 6, 0 un commutateur à forte intensité de transistor MOSFET, transistor de puissance du transistor MOSFET 8205A
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and C... Voir plus
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