système de recuit thermique rapide de 150mm avec trois gaz de processus d'ensembles
Prix: Negotiable
MOQ: 1
Heure de livraison: 8-10week days
Marque: GaNova
Souligner:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Voir plus
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Augmentez votre production avec le traitement thermique rapide RTP-SA-8
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3 month
Marque: Ganova
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Voir plus
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Le Fe a enduit GaN Substrates Resistivity > 10 le ⁶ Ω·Dispositifs RF de cm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Voir plus
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625um 675um 4 au saphir plat bleu de pouce LED GaN Epitaxial Wafer On Sapphire SSP
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Voir plus
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C-avion Sapphire Substrate Wafer de JDCD08-001-006 6inch
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Voir plus
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GaN de 2 pouces sur la gaufre en silicium HEMT Epi pour le dispositif de puissance
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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5 x 10 mm2 M font face à l'épaisseur 325um 375um de gaufrette épitaxiale de GaN
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Voir plus
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GaN dopé UID de type N de 4 pouces sur tranche de saphir Résistivité SSP > 0,5 Ω cm LED, laser, plaquette épitaxiale PIN
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Voir plus
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4 pouces bleu LED GaN plaquette épitaxiale C plan saphir plat
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Voir plus
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Substrats U-GaN SI-GaN autoportants pour tranches épitaxiales GaN 375 um
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Voir plus
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Substrate GaN indépendant dopé en Fe de 4 pouces Substrate de nitrure de gallium
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Voir plus
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Substrate GaN indépendant de 4 pouces dopé en Fe nitrure de gallium
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Voir plus
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GaN de 2 pouces sur la gaufre en silicium HEMT Epi pour le dispositif de puissance
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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Substrate GaN indépendant non dopé de 2 pouces
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... Voir plus
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Substrat monocristallin 10x10mm2 de galette de Ga2O3 de dopage de Sn
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Voir plus
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Ga2O3 gaufrette polie latérale simple Crystal Substrate simple
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... Voir plus
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0.6mm 0.8mm Ga2O3 Crystal Substrate Single Polishing simple
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... Voir plus
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JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Monocristal Substrat Product Grade Single Polishing
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... Voir plus
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gaufrette sic épitaxiale de 150.0mm +0mm/-0.2mm aucun appartement secondaire 3mm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Voir plus
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47,5 millimètres de ± gaufrette sic épitaxiale 150,0 millimètre +0mm/-0.2mm to<11-20>±1° parallèle de 1,5 millimètres
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Voir plus
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