Le Fe a enduit GaN Substrates Resistivity > 10 le ⁶ Ω·Dispositifs RF de cm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Voir plus
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GaN de 2 pouces sur la gaufre en silicium HEMT Epi pour le dispositif de puissance
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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GaAs Epi Wafer
(15)
18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:18mm GaAs Si Wafer, GaAs Undoped Substrates VGF, GaAs Si Wafer 2inch
2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some d... Voir plus
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XRD
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Electronic Grade Single Crystal Diamond, Electronic Diamond Substrates, Heat Sink Single Crystal Diamond
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système de recuit thermique rapide de 150mm avec trois gaz de processus d'ensembles
Prix: Negotiable
MOQ: 1
Heure de livraison: 8-10week days
Marque: GaNova
Souligner:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Voir plus
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Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement
Prix: Negotiable
MOQ: 1
Heure de livraison: 8-10week days
Marque: GaNova
Souligner:Hall Effect Sensor Tester Mobility Resistivity, carrier concentration hall effect instrument, Hall Effect Sensor Tester semiconductor
Hall Coefficient Hall Effect Sensor Tester mobility resistivity measurement Product Overview: Hall effect tester is used to measure the carrier concentration, mobility, resistivity, Hall coefficient and other important parameters, and these parameters of semiconductor materials to understand the ele... Voir plus
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AIN Sapphire Wafer Sapphire Single semi isolant ou le double côté a poli
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: Negotiable
Marque: GaNova
Souligner:AIN Sapphire Wafer, Semi Insulating AIN Wafer, Sapphire Wafer Single Side Polished
2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide var... Voir plus
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94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: Negotiable
Marque: GaNova
Souligner:94um Laser Diode Chip, high power laser diode chip, 1.0W/A Laser Diode Chip
94μm Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm 915nm 10W COS Diode Laser Chip On Submount Design For low power consumption it is essential that the output from the laser diode (LD) is efficiently coupled to the optical waveguide, and there are several approaches reported in the liter... Voir plus
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100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Souligner:Silicon Carbide Crystal P Grade, single crystal silicon carbide, Silicon Carbide Crystal 4H
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabricati... Voir plus
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Plaquette Ga2O3
(13)
Substrat monocristallin 10x10mm2 de galette de Ga2O3 de dopage de Sn
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Voir plus
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JDCD07-001-001 Plaquette épitaxiale SOI de 4 pouces pour le traitement MEMS
Prix: Negotiable
MOQ: 1
Heure de livraison: 3-4 week days
Marque: GaNova
4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure sil... Voir plus
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Sapphire Wafer
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C-avion Sapphire Substrate Wafer de JDCD08-001-006 6inch
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Voir plus
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UKAS Patterned Sapphire Substrates Flat Edge Angle
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: GaNova
Souligner:UKAS Patterned Sapphire Substrates, al2o3 substrate 430um, Patterned Sapphire Substrates OEM
50.80±0.10mm Patterned Sapphire Substrates Flat Edge Angle A-Plane±0.2o 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The efficacy enhancement of GaN-based LEDs with the patterned-sapphire substrate technique is generally attributed to the improvement in both light extraction effic... Voir plus
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Support de gaufrette en téflon de 6 pouces nettoyant les paniers et les poignées de fleurs
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Souligner:6inch Wafer Holder, wafer cassette carrier, 25 PCS Wafer Holder
6inch Wafer Holder Cleaning Flower Baskets And Handles PFA Cassette / Cassette of wafer can be customized and designed by customers’ request, able to resist strong acid, strong hydrofluoric acid, strong base and heat up to 200~220℃, use to deliver wafers in acid & base process of Fabrication f... Voir plus
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0.1mm/s To 600mm/s Wafer Dicing Machine X Axis Cutting Range 260mm
Prix: Negotiable
MOQ: 1
Heure de livraison: 8-10week days
Marque: GaNova
Souligner:0.1mm/s Wafer Dicing Machine, wafer saw machine 260mm, 600mm/s Wafer Dicing Machine
DAD3350 Wafer Dicing Machine 0.1 ～ 600mm/s X-Axis Cutting Range 260mm Improved throughput The DAD3350 achieves improvement in throughput by increasing the speed of each axis. Ease of use Operability is improved with installation of an LCD touch screen and Graphical User Interface (GUI). Easy operati... Voir plus
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