GaN Epitaxial Wafer
(69)
Le Fe a enduit GaN Substrates Resistivity > 10 le ⁶ Ω·Dispositifs RF de cm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Voir plus
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625um 675um 4 au saphir plat bleu de pouce LED GaN Epitaxial Wafer On Sapphire SSP
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Voir plus
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GaN 2 pouces de nitrure de gallium en substrat monocristallin
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Souligner:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Voir plus
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Un seul cristal Gan Epi Wafer Substrate de nitrure de gallium 4 pouces
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Souligner:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Voir plus
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4 pouces de nitrure de gallium GaN en substrat GaN dopé
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Voir plus
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625um à 675um 4 pouces LED bleu de nitrure de gallium GaN Wafer épitaxial sur le saphir SSP Sapphire plat
Prix: Negotiable
MOQ: 5
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Voir plus
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GaN de type N de 2 ¢ 6 pouces sur une gaufre épitaxiale en saphir pour un dispositif de numérotation laser LED
Prix: Negotiable
MOQ: 5
Heure de livraison: 3-4 weeks
Souligner:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Voir plus
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Wafer épitaxial GaN essentiel pour la production de puces haute tension haute fréquence
Prix: Negotiable
MOQ: 5
Heure de livraison: 3-4 weeks
Marque: Ganova
Souligner:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Voir plus
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5 x 10 mm2 M font face à l'épaisseur 325um 375um de gaufrette épitaxiale de GaN
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Voir plus
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GaN dopé UID de type N de 4 pouces sur tranche de saphir Résistivité SSP > 0,5 Ω cm LED, laser, plaquette épitaxiale PIN
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Voir plus
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4 pouces bleu LED GaN plaquette épitaxiale C plan saphir plat
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Voir plus
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Substrats U-GaN SI-GaN autoportants pour tranches épitaxiales GaN 375 um
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Voir plus
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12.5mm 2inch N libre GaN Epi Wafer Si Doped
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... Voir plus
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Pouce GaN Epi Wafer Dimensions de l'épaisseur 370um 430um 2 50mm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... Voir plus
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Plaquette épitaxiale GaN 5x10mm2 Type SI dopé Un
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... Voir plus
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Plaquette de semi-conducteur de nitrure de gallium monocristallin TTV 10um
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Voir plus
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Avion de la gaufrette de semi-conducteur de nitrure de gallium 325um 375um C
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Voir plus
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5x10mm2 Sp face Gan plaquette épitaxiale UN type substrat monocristallin de Gan dopé si
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Voir plus
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L'ONU a enduit le type GaN Single Crystal Substrate 5x10mm2 M Face de N
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Voir plus
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Voir plus
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