Gaufrette sic épitaxiale
(42)
Dispositif de puissance de 2 pouces Transistor à haute mobilité électronique Wafer épitaxial
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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GaN de 2 pouces sur la gaufre en silicium HEMT Epi pour le dispositif de puissance
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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Barrière d'AlGaN 4 pouces GaN sur le silicium HEMT Epi wafer nitrure de gallium GaN-sur-Si
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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6 pouces GaN sur le silicium HEMT Epi Wafer Power Device Nitrure de gallium GaN sur le Si
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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GaN laser violet sur le silicium 2 pouces GaN sur le silicium HEMT Epi plaque UV LD Epi plaque
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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2 pouces GaN sur le silicium bleu LD Epi Wafer GaN laser bleu sur le silicium
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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L'éclairage LED bleu GaN sur la plaque de silicium
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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2 pouces GaN sur le silicium vert LED Epi wafer Nitrure de gallium sur le silicium
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Voir plus
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4 pouces de GaN sur la plaque de silicone verte LED Epi plaquettes SiC plaquettes épitaxielles
Prix: 1000
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Voir plus
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4 pouces de GaN sur la plaque de silicone verte LED Epi plaquettes SiC plaquettes épitaxielles
Prix: 1000
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Voir plus
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4 pouces d'uGaN sur le nitrure de gallium non dopé de silicium sur la gaufre épitaxienne de silicium
Prix: 1000
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Voir plus
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gaufrette sic épitaxiale de 150.0mm +0mm/-0.2mm aucun appartement secondaire 3mm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Voir plus
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47,5 millimètres de ± gaufrette sic épitaxiale 150,0 millimètre +0mm/-0.2mm to<11-20>±1° parallèle de 1,5 millimètres
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Voir plus
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4H gaufrette sic épitaxiale ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 millimètre +0mm/-0.2mm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Voir plus
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4H gaufrette sic épitaxiale 0.015Ω•cm-0.025Ω•² 150,0 millimètre +0mm/-0.2mm de cm ≤4000/cm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Voir plus
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Substrat SiC de niveau P de 2 pouces pour les appareils électriques et les appareils à micro-ondes
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Voir plus
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Substrat SiC de 2 pouces 350 μm pour l'électronique de puissance exigeante
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Voir plus
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0.015Ω•cm-0.025Ω•CMP polonais optique de SI-visage de C-visage sic épitaxial de gaufrette de cm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Voir plus
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niveau P de substrat de carbure de silicium de 260μm pour des dispositifs de puissance et des dispositifs à micro-ondes
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Voir plus
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Polytype Non autorisé Plaquette épitaxiale SiC P-MOS P-SBD Grade D
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Voir plus
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