Système de recuit RTP-SA-8 pour le traitement thermique rapide de la production
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3 month
Marque: Ganova
Souligner:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Voir plus
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système de recuit thermique rapide de 150mm avec trois gaz de processus d'ensembles
Prix: Negotiable
MOQ: 1
Heure de livraison: 8-10week days
Marque: GaNova
Souligner:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Voir plus
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Le Fe a enduit GaN Substrates Resistivity > 10 le ⁶ Ω·Dispositifs RF de cm
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Voir plus
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625um 675um 4 au saphir plat bleu de pouce LED GaN Epitaxial Wafer On Sapphire SSP
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Voir plus
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C-avion Sapphire Substrate Wafer de JDCD08-001-006 6inch
Prix: Negotiable
MOQ: Negotiable
Heure de livraison: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Voir plus
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GaN 2 pouces de nitrure de gallium en substrat monocristallin
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Souligner:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Voir plus
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Un seul cristal Gan Epi Wafer Substrate de nitrure de gallium 4 pouces
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Souligner:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Voir plus
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4 pouces de nitrure de gallium GaN en substrat GaN dopé
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Voir plus
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Dispositif de puissance de 2 pouces Transistor à haute mobilité électronique Wafer épitaxial
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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625um à 675um 4 pouces LED bleu de nitrure de gallium GaN Wafer épitaxial sur le saphir SSP Sapphire plat
Prix: Negotiable
MOQ: 5
Heure de livraison: 3-4 week days
Marque: GaNova
Souligner:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Voir plus
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ALN 10*10mm2 AlN monocristallin 400±50μM Grade S/P/R
Prix: Negotiable
MOQ: 1
Heure de livraison: Negotiable
Marque: GaNova
Souligner:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Voir plus
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GaN de 2 pouces sur la gaufre en silicium HEMT Epi pour le dispositif de puissance
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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GaN de type N de 2 ¢ 6 pouces sur une gaufre épitaxiale en saphir pour un dispositif de numérotation laser LED
Prix: Negotiable
MOQ: 5
Heure de livraison: 3-4 weeks
Souligner:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Voir plus
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1 pouce de plaquette monocristalline AlN 400±50μM de qualité S/P/R
Prix: Negotiable
Heure de livraison: Negotiable
Marque: GaNova
Souligner:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Voir plus
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Wafer épitaxial GaN essentiel pour la production de puces haute tension haute fréquence
Prix: Negotiable
MOQ: 5
Heure de livraison: 3-4 weeks
Marque: Ganova
Souligner:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Voir plus
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Barrière d'AlGaN 4 pouces GaN sur le silicium HEMT Epi wafer nitrure de gallium GaN-sur-Si
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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6 pouces GaN sur le silicium HEMT Epi Wafer Power Device Nitrure de gallium GaN sur le Si
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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GaN laser violet sur le silicium 2 pouces GaN sur le silicium HEMT Epi plaque UV LD Epi plaque
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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2 pouces GaN sur le silicium bleu LD Epi Wafer GaN laser bleu sur le silicium
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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L'éclairage LED bleu GaN sur la plaque de silicium
Prix: Negotiable
MOQ: 5
Heure de livraison: Negotiable
Marque: Ganova
Souligner:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Voir plus
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